收藏本站
NDF04N60Z, NDD04N60Z
N-Channel Power MOSFET
600 V, 2.0 W
Features
? Low ON Resistance
? Low Gate Charge
? ESD Diode ? Protected Gate
? 100% Avalanche Tested
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
Parameter Symbol NDF NDD Unit
Drain ? to ? Source Voltage V DSS 600 V
http://onsemi.com
V DSS (@ T Jmax ) R DS(on) (MAX) @ 2 A
650 V 2.0 Ω
N ? Channel
D (2)
Continuous Drain Current R q JC (Note 1)
I D
4.8
4.1
A
Continuous Drain Current R q JC , T A =
100 ° C (Note 1)
Pulsed Drain Current,
V GS @ 10V
I D
I DM
3.0
20
2.6
20
A
A
G (1)
Power Dissipation R q JC
Gate ? to ? Source Voltage
P D
V GS
30
± 30
83
W
V
S (3)
Single Pulse Avalanche Energy, I D = 4.0
A
ESD (HBM) (JESD22 ? A114)
E AS
V esd
120
3000
mJ
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%, T A = 25 ° C)
(Figure 15)
Peak Diode Recovery (Note 2)
V ISO
dV/dt
4500
4.5
?
V
V/ns
3
3
MOSFET dV/dt
Continuous Source Current
(Body Diode)
Maximum Temperature for Soldering
Leads
Operating Junction and
Storage Temperature Range
dV/dt
I S
T L
T J , T stg
60
4.0
260
? 55 to 150
V/ns
A
° C
° C
1
2
NDF04N60ZG
TO ? 220FP
CASE 221D
4
1
2
NDF04N60ZH
TO ? 220FP
CASE 221AH
3
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I SD = 4.0 A, di/dt ≤ 100 A/ m s, V DD ≤ BV DSS , T J = +150 ° C
1
2
NDD04N60Z ? 1G
IPAK
CASE 369D
4
1 2
3
NDD04N60ZT4G
DPAK
CASE 369AA
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
June, 2013 ? Rev. 8
1
Publication Order Number:
NDF04N60Z/D
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NDF04N62ZG MOSFET N-CH 620V 2OHM TO220FP
NDF05N50ZH MOSFET N-CH 500V 4.4A TO-220FP
NDF06N60ZG MOSFET N-CH 600V 7.1A TO-220FP
NDF06N60ZH MOSFET N CH 600V 7.1A TO220FP
NDF06N62ZG MOSFET N-CH 620V 1.2OHM TO220FP
NDF08N50ZG MOSFET N-CH 500V 8.5A TO-220FP
NDF08N50ZH MOSFET N CH 500V 8.5A TO220FP
NDF08N60ZG MOSFET N-CH 600V 7.5A TO220FP
相关代理商/技术参数
NDF04N62Z 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 620 V, 1.8 
NDF04N62ZG 功能描述:MOSFET NFET TO220FP 620V 2 OHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDF05N50Z 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 500 V, 1.25 ?
NDF05N50ZG 功能描述:MOSFET NFET T0220FP 500V 5A 1.5R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDF05N50ZH 功能描述:MOSFET NFET 500V 5A 1.2 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDF0610 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor
NDF06N60Z 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:NDP06N60Z
NDF06N60ZG 功能描述:MOSFET NFET TO220FP 600V 6A .98R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube